標題: Carrier dynamics in InN nanorod arrays
作者: Ahn, Hyeyoung
Yu, Chih-Cheng
Yu, Pyng
Tang, Jau
Hong, Yu-Liang
Gwo, Shangjr
光電工程學系
Department of Photonics
公開日期: 16-一月-2012
摘要: In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (similar to 30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures. (C)2012 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.20.000769
http://hdl.handle.net/11536/15255
ISSN: 1094-4087
DOI: 10.1364/OE.20.000769
期刊: OPTICS EXPRESS
Volume: 20
Issue: 2
起始頁: 769
結束頁: 775
顯示於類別:期刊論文


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