Title: Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics
Authors: Liao, Chia-Chun
Lin, Min-Chen
Liu, Shao-Xuan
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
Keywords: Metal-induced lateral crystallization (MILC);strain;thin-film transistors (TFTs)
Issue Date: 1-Feb-2012
Abstract: This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.
URI: http://dx.doi.org/10.1109/LED.2011.2174609
http://hdl.handle.net/11536/15237
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2174609
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 2
Begin Page: 239
End Page: 241
Appears in Collections:Articles


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