標題: High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels
作者: Lu, Yi-Hsien
Kuo, Po-Yi
Lin, Je-Wei
Wu, Yi-Hong
Chen, Yi-Hsuan
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: FinFETs;L-fin;multiple gate;NH3 plasma;Ni salicidation;poly-Si thin-film transistors (TFTs)
公開日期: 1-二月-2012
摘要: For the first time, we construct poly-Si thin-film transistors (TFTs) with novel L-shaped poly-Si fin channels (poly-Si TFTs with L-fin channels, called LFin-TFTs). The L-fin channels of LFin-TFTs are similar to the multiple-gated fin channels of FinFETs. The LFin-TFTs exhibit a low supply gate voltage (3 V), a good subthreshold swing (SS) similar to 190 mV/dec, and a high on/off current ratio (I-ON/I-OFF) > 10(6) (V-D = 1 V) without hydrogen-related plasma treatments. After Ni salicidation, the devices exhibit steep SS similar to 148 mV/dec and I-ON/I-OFF similar to 10(7). After NH3 plasma treatment, the characteristics of the devices are further improved. The LFin-TFTs have steeper SS similar to 132 mV/dec, higher I-ON/I-OFF > 10(7), and threshold voltage (V-TH) similar to 0.036 V.
URI: http://dx.doi.org/10.1109/LED.2011.2175357
http://hdl.handle.net/11536/15235
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2175357
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 2
起始頁: 215
結束頁: 217
顯示於類別:期刊論文


文件中的檔案:

  1. 000299812300029.pdf