標題: A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's
作者: Lee, RGH
Su, JS
Chung, SS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-一月-1996
摘要: Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of the drain side in MOS devices was rather difficult, A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced N-it and Q(ox) is presented, Submicron LDD n-MOS devices were tested and charge pumping measurements were performed, The spatial distributions of both N-it and Q(ox) have been justified by two-dimensional (2-D) device simulation of the I-V characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for devices.
URI: http://dx.doi.org/10.1109/16.477596
http://hdl.handle.net/11536/1521
ISSN: 0018-9383
DOI: 10.1109/16.477596
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 43
Issue: 1
起始頁: 81
結束頁: 89
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TN38600012.pdf