標題: METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM
作者: RAY-HUA HORNG
YEN-CHU LI
CHUN-YI TUNG
SI-HAN TSAI
LI-CHUNG CHENG
公開日期: 14-Mar-2019
摘要: The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.
官方說明文件#: H01L031/18
H01L031/032
C30B029/26
C30B025/18
URI: http://hdl.handle.net/11536/151509
專利國: USA
專利號碼: 20190081197
Appears in Collections:Patents


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  1. 20190081197.pdf