標題: LIGHT EMISSION DIODE WITH FLIP-CHIP STRUCTURE AND MANUFACTURING METHOD THEREOF
作者: RAY-HUA HORNG
RAY-HUA HORNG
HUAN-YU CHIEN
公開日期: 14-Feb-2019
摘要: A light emitting diode device with flip-chip structure includes a transparent protective substrate, a transparent conductor layer, a glue layer, a group III-V stack layer, a first conductivity metal electrode, a second conductivity metal electrode and an insulating layer. The transparent conductor layer is formed on the transparent protective substrate. The glue layer bonds the transparent protective substrate and the transparent conductor layer. The group III-V stack layer and the first conductivity metal electrode are respectively formed on a first portion and a second portion of the transparent conductor layer. The second conductivity metal electrode is formed on a portion of the group III-V stack layer. The insulating layer covers exposed portions of the transparent conductor layer and the group III-V stack layer, and the insulating layer further covers portions of the first and second conductivity metal electrodes, so as to expose the first and second conductivity metal electrodes.
官方說明文件#: H01L033/00
H01L033/62
URI: http://hdl.handle.net/11536/151506
專利國: USA
專利號碼: 20190051790
Appears in Collections:Patents


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  1. 20190051790.pdf