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dc.contributor.authorHuang, Jiun-Jiaen_US
dc.contributor.authorTseng, Yi-Mingen_US
dc.contributor.authorLuo, Wun-Chengen_US
dc.contributor.authorHsu, Chung-Weien_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2014-12-08T15:21:19Z-
dc.date.available2014-12-08T15:21:19Z-
dc.date.issued2011en_US
dc.identifier.isbn978-1-4577-0505-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/15143-
dc.description.abstractLack of a suitable selection device to suppress sneak current has impeded the development of 4F(2) crossbar memory array utilizing stable and scalable bipolar resistive-switching. We report a high-performance nonlinear bipolar selector realized by a simple Ni/TiO2/Ni MIM structure with a high current density of 10(5) A/cm(2), and a Ni/TiO2/Ni/HfO2/Pt vertically stacked 1S1R cell capable of gigabit memory implementation. Furthermore, the demonstration of 1S1R array fabricated completely at room temperature on a plastic substrate highlights the promise of future extremely low-cost flexible nonvolatile memory.en_US
dc.language.isoen_USen_US
dc.titleOne Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory Applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000300015300185-
Appears in Collections:Conferences Paper