|標題:||Near Infrared Silicon Quantum Dots MOSFET Detector|
Huang, Jung Y.
Department of Photonics
|摘要:||Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mu m, photoresponse as high as 2.0A/W was measured. (C) 2009 Optical Society of America|
|期刊:||2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5|
|Appears in Collections:||Conferences Paper|