標題: Interfacial Layer Engineering for Ge MOSFET by Metal Element Doping and Characterization of Interface Density
作者: Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2018
URI: http://hdl.handle.net/11536/151068
期刊: 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
起始頁: 101
結束頁: 101
Appears in Collections:Conferences Paper