|標題:||Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications|
Shieh, Han-Ping D.
Department of Photonics
Institute of Display
|關鍵字:||Amorphous oxide semiconductor;bias stability;hybrid inverter;additive patterning;solution based|
|摘要:||To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum-or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.|
|期刊:||2018 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) - CONFERENCE PROCEEDINGS|
|Appears in Collections:||Conferences Paper|