標題: Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristics
作者: Liu, Kou-Chen
Tzeng, Wen-Hsien
Chang, Kow-Ming
Huang, Jiun-Jie
Lee, Yun-Ju
Yeh, Ping-Hung
Chen, Pang-Shiu
Lee, Heng-Yuan
Chen, Frederick
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Lanthanum aluminate;Resistive switching;Switching memory;Oxygen partial pressure;LaAlO3;Pulsed laser deposition
公開日期: 1-Dec-2011
摘要: The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism. (C) 2011 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.04.205
http://hdl.handle.net/11536/15086
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.04.205
期刊: THIN SOLID FILMS
Volume: 520
Issue: 4
起始頁: 1246
結束頁: 1250
Appears in Collections:Conferences Paper


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