標題: Self-assembled Ni nanodot on SiO2 film-a novel reactive ion etching mask for Si nanopillar formation on Si substrate
作者: Lin, Huang-Shen
Kao, Chih-Chiang
Kuo, Hao-Chung
Wang, Shing-Chung
Lin, Gong-Ru
光電工程學系
Department of Photonics
關鍵字: self-assemble;Ni nano-dot;Si nano-pillar;reactive ion etching;mask;SiO2;Si
公開日期: 1-Jan-2006
摘要: By rapid thermal annealing the Ni film evaporated on thin SiO2 layer covered Si substrate, we have successfully demonstrated the self-aggregation of two-dimensional randomized Ni nano-dots on Si wafer. The thin oxide layer prevents the formation of NiSi2 compounds and facilitates the self-assembly of Ni nanodots from retaining the thermal power on SiO2 layer. This greatly shrinks the annealing time required for metallic nanodot formation from > 10 min to < 30 sec. With the advantage of the self-assemble Ni/SiO2 nano-dots based nano-mask, a large-area Si nano-pillar array with rod size of < 50 nm can be formatted on Si substrate through the induced coupled plasma reactive ion etching (ICPRIE) procedure. After removing Ni dots and the SiO2 film on the Si substrate, both the visible and near infrared photoluminescence from the Si nano-pillar sample were observed and analyzed.
URI: http://dx.doi.org/10.1117/12.663339
http://hdl.handle.net/11536/150824
ISBN: 0-8194-6251-9
ISSN: 0277-786X
DOI: 10.1117/12.663339
期刊: NANOPHOTONICS-USA
Volume: 6195
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper


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