|標題:||A Novel ReWritable One-Time-Programming OTP (RW-OTP) Realized by Dielectric-fuse RRAM Devices Featuring Ultra-High Reliable Retention and Good Endurance for Embedded Applications|
|作者:||Cheng, H. W.|
Hsieh, E. R.
Huang, Z. H.
Chuang, C. H.
Chen, C. H.
Li, F. L.
Lo, Y. M.
Liu, C. H.
Chung, Steve S.
Department of Electronics Engineering and Institute of Electronics
|摘要:||A novel concept of OTP has been demonstrated to create another feasibility to allow re-writable capability before storing the data. This OTP is named ReWritable One-time programming (RW-OTP) memory. With RW-OTP, users can do the test by modifying the contexts repeatedly before finalizing the stored data. To implement the memory cell, it consists of a gate-floated FinFET and an RRAM where a bilayer has been designed as a thicker dielectric layer with resistive-switching property on a thinner dielectric-fuse layer. Moreover, the process of RW-OTP is fully compatible with the state-of-the-art CMOS logic technology. The result shows that the memory cell exhibits high retention and good endurance. With proper use of RW-OTP, the users can not only reduce error jobs cost-efficiently but also can develop various applications for their needs. This memory cell is very promising for embedded applications.|
|期刊:||2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)|
|Appears in Collections:||Conferences Paper|