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dc.contributor.authorPeng, Kang-Pingen_US
dc.contributor.authorHsu, Kimen_US
dc.contributor.authorGer, Finnen_US
dc.contributor.authorTsai, Tsung-Changen_US
dc.date.accessioned2019-04-02T06:04:22Z-
dc.date.available2019-04-02T06:04:22Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/150740-
dc.description.abstractA novel approach for failure analysis with in situ TEM method is proposed and demonstrated in this work. With an ingenious sample preparation scheme, the approach allows us to perform both plan-view and cross-sectional TEM inspections on the same failure sites in a chip in an efficient way. The sample preparation is not difficult and can be processed with conventional tools. In the beginning, a large-area lamella for plane-view analysis is prepared and the condition of the SEM inspection is appropriately adjusted to enhance the voltage contrast revealed by the failure sites. Then the lamella is further processed by means of FIB milling to enable further examination with the cross-sectional TEM. As compared with the traditional way of preparing TEM P-V samples, this method can save time by more than 70%.en_US
dc.language.isoen_USen_US
dc.titleA novel solution for efficient in situ TEM cross-section and plan-view analyses with an advanced sample preparation schemeen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000444747600081en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper