|標題:||Aging-aware Statistical Soft-Error-Rate Analysis for Nano-Scaled CMOS Designs|
|作者:||Lin, Cosette Y. H.|
Huang, Ryan H. -M.
Wen, Charles H. -P.
Chang, Austin C. -C.
Department of Electrical and Computer Engineering
|摘要:||Aging and soft errors have become the two most critical reliability issues for nano-scaled CMOS designs. In this paper, the aging effect due to negative bias temperature instability (NBTI) is first analyzed on cells using a 45nm CMOS technology for soft errors. Second, an accurate statistical soft-error-rate (SSER) framework is built and incorporates the aging-aware cell models. As a result, two findings are discovered: (1) PMOS-induced transient faults, comparing to NMOS-induced ones, have more variation in pulse widths since PMOS is more susceptible to NBTI; (2) NBTI together with process variation, induces more soft errors (similar to 19%) and thus needs to be considered, simultaneously, during circuit analysis. Experimental result shows that our SSER framework considering both process variation and aging is efficient (with multiple-order speedups) and achieves high accuracy (with <3% errors) when compared with Monte-Carlo SPICE simulation.|
|期刊:||2013 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT)|
|Appears in Collections:||Conferences Paper|