Title: Wafer-level three-dimensional integrated circuits (3D IC): Schemes and key technologies
Authors: Lai, Ming-Fang
Li, Shih-Wei
Shih, Jian-Yu
Chen, Kuan-Neng
Department of Electronics Engineering and Institute of Electronics
Keywords: Three-dimensional integrated circuits (3D IC);Through-silicon via (TSV);Wafer bonding
Issue Date: 1-Nov-2011
Abstract: Schemes and key technologies of wafer-level three-dimensional integrated circuits (3D IC) are reviewed and introduced in this paper. Direction of wafer stacking, methods of wafer bonding, fabrication of through-silicon via (TSV), and classification of wafer type are options for 3D IC schemes. Key technologies, such as alignment. Cu bonding, and TSV fabrication, are described as well. Better performance, lower cost, and more functionality of future electronic products become feasible with 3D IC concept application. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2011.05.036
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.05.036
Volume: 88
Issue: 11
Begin Page: 3282
End Page: 3286
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