標題: Role of the N-related localized states in the electron emission properties of a GaAsN quantum well
作者: Hsieh, Meng-Chien
Wang, Jia-Feng
Wang, Yu-Shou
Yang, Cheng-Hong
Chen, Ross C. C.
Chiang, Chen-Hao
Chen, Yung-Fu
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
公開日期: 15-十一月-2011
摘要: This study elucidates the influence of the N-related localized states on electron emission properties of a GaAsN quantum well (QW) that is grown by molecular beam epitaxy. The N-related localized states in a GaAsN QW are identified as both optical and electrical electron trap states. Furthermore, exactly how N-related localized states influence the electron emission properties of a GaAsN quantum well is examined. The presence of N-related localized states effectively suppresses the tunneling emission of GaAsN QW electron states, leading to a long electron emission time for the GaAsN QW electron states. Thermal annealing can reduce the number of N-related localized states, resulting in a recovery of the tunneling emission for GaAsN QW electron states. Increasing the annealing temperature can restore the electron emission behavior of GaAsN QW to the typical electron tunneling emission for a high-quality QW. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3663436]
URI: http://dx.doi.org/10.1063/1.3663436
http://hdl.handle.net/11536/15060
ISSN: 0021-8979
DOI: 10.1063/1.3663436
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 110
Issue: 10
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000297943700067.pdf