Title: Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure
Authors: Chen, C. W.
Hung, S. C.
Lee, C. H.
Tun, C. J.
Kuo, C. H.
Yang, M. D.
Yeh, C. W.
Wu, C. H.
Chi, G. C.
照明與能源光電研究所
Institute of Lighting and Energy Photonics
Issue Date: 1-Dec-2011
Abstract: Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America
URI: http://hdl.handle.net/11536/15038
ISSN: 2159-3930
Journal: OPTICAL MATERIALS EXPRESS
Volume: 1
Issue: 8
Begin Page: 1555
End Page: 1560
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