標題: Conversion Efficiency Enhancement of GaN/In0.11Ga0.89N Solar Cells With Nano Patterned Sapphire and Biomimetic Surface Antireflection Process
作者: Wang, H. W.
Chen, H. C.
Chang, Y. A.
Lin, C. C.
Han, H. W.
Tsai, M. A.
Kuo, H. C.
Yu, P.
Lin, S. H.
光電系統研究所
電子物理學系
光電工程學系
光電工程研究所
Institute of Photonic System
Department of Electrophysics
Department of Photonics
Institute of EO Enginerring
關鍵字: Biomimetic surface antireflection;InGaN solar cells
公開日期: 15-Sep-2011
摘要: In this study, p-i-n double-heterojunction GaN/In0.11Ga0.89N solar cells grown by metal-organic chemical vapor deposition on pattern sapphire substrate are presented. The solar cell with standard process has a conversion efficiency of 3.1%, which corresponds to a fill factor of 58%, short circuit current density of 2.86 mA/cm(2), and open circuit voltage of 1.87 V under AM1.5G illumination. To further improve the conversion efficiency of the GaN/In0.11Ga0.89N solar cells, two-dimensional polystyrene nanospheres were deposited and self-organized as mask in the anisotropic inductively coupled plasma reactive ion etching process to form a biomimetic surface roughing texture. The surface morphology of the solar cell shows a periodically hexagonal bead pattern and the beads are formed in a diameter of 160 nm with a period of 250 nm. An increase of 15% in short circuit current density is found, thus improving the conversion efficiency to 3.87%. If we optimize the structure for 180 nm of the height and 375 nm of the period, a 10% gain can be expected when compared to the current structure.
URI: http://dx.doi.org/10.1109/LPT.2011.2160051
http://hdl.handle.net/11536/150363
ISSN: 1041-1135
DOI: 10.1109/LPT.2011.2160051
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 23
起始頁: 1304
結束頁: 1306
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