標題: Enhanced Output Power of GaN-Based Resonance Cavity Light-Emitting Diodes With Optimized ITO Design
作者: Wu, Tzeng-Tsong
Lin, Chien-Chung
Wu, Yun-Lin
Chen, Chien-Kang
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: Current spreading;GaN;indium tin oxide (ITO);resonance cavity light-emitting diodes (RCLEDs)
公開日期: 15-Dec-2011
摘要: We fabricated and measured GaN-based resonant cavity light-emitting diodes with a 30 nm thick Indium tin oxide (ITO) thin film as a transparent contact layer. Four different ITO structures on p-type GaN samples were deposited by sputter and e-gun, and the corresponding device performance was compared. Each of these four samples has been annealed by its optimal parameters. The ITO thin film deposited by sputter demonstrated better electrical characteristics, surface morphology, specific contact resistance, and the overall device light output compared to those of the e-gun samples. Between the two sputtered ITO types, the hybrid type shows higher roll-over current density of 14 kA/cm(2), and the output power is increased from 15 to 39 mu W. From statistical data of the 2-D light intensity under the same current, we saw the lateral current spreading of the pure crystalline ITO by sputter is worst. The hybrid type, which combines the crystalline and amorphous ITO, has the best overall performance when we consider all the electrical, optical, and metrology measurements. From these results, we believe the 30 nm thick hybrid ITO thin film has the best potential to be applied in light emitting devices such as light-emitting diodes, laser diodes, etc.
URI: http://dx.doi.org/10.1109/JLT.2011.2172916
http://hdl.handle.net/11536/15034
ISSN: 0733-8724
DOI: 10.1109/JLT.2011.2172916
期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume: 29
Issue: 24
起始頁: 3757
結束頁: 3763
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