標題: High-Performance Light-Erasable Memory and Real-Time Ultraviolet Detector Based on Unannealed Indium-Gallium-Zinc-Oxide Thin-Film Transistor
作者: Chen, Wei-Tsung
Zan, Hsiao-Wen
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Indium-gallium-zinc-oxide (IGZO);memory;photodetector and room temperature
公開日期: 1-一月-2012
摘要: A light-erasable memory and a real-time ultraviolet (UV) detector were developed from an amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistor fabricated at room temperature without post-annealing. The natural defects within the IGZO or at the dielectric interface serve as electron traps to support a writing operation (switching down the channel conductance). A negative gate bias accompanied by UV illumination performs an erasing operation (switching up the channel conductance). After the writing/erasing of the proposed memory, an on/off ratio greater than 10(4) was maintained for a testing duration of 10 000 s. A real-time UV detector was also developed, and a light/dark ratio of roughly 10(4) was demonstrated.
URI: http://dx.doi.org/10.1109/LED.2011.2171316
http://hdl.handle.net/11536/15022
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2171316
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 1
起始頁: 77
結束頁: 79
顯示於類別:期刊論文


文件中的檔案:

  1. 000298380300025.pdf