標題: Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature
作者: Yu, Ming-Jiue
Yeh, Yung-Hui
Cheng, Chun-Cheng
Lin, Chang-Yu
Ho, Geng-Tai
Lai, Benjamin Chih-Ming
Leu, Chyi-Ming
Hou, Tuo-Hung
Chan, Yi-Jen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Amorphous InGaZnO;roll-to-roll;thin-film transistor (TFT)
公開日期: 1-一月-2012
摘要: High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm(2)/V . s, the threshold voltage is - 1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10(5). The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.
URI: http://dx.doi.org/10.1109/LED.2011.2170809
http://hdl.handle.net/11536/15020
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2170809
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 1
起始頁: 47
結束頁: 49
顯示於類別:期刊論文


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