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dc.contributor.authorHuang, Chien-Jungen_US
dc.contributor.authorPan, Fu-Mingen_US
dc.contributor.authorChen, Hsiu-Yingen_US
dc.contributor.authorLi-Changen_US
dc.date.accessioned2019-04-02T05:58:35Z-
dc.date.available2019-04-02T05:58:35Z-
dc.date.issued2010-09-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3476567en_US
dc.identifier.urihttp://hdl.handle.net/11536/150054-
dc.description.abstractThis study prepares PdO nanostructures on a SiO2 substrate by reactive-sputter deposition and examines photoresponse characteristics of the thin films. PdO thin films deposited at 25 degrees C is composed of bowed nanoflakes standing on the SiO2 substrate, which have a single-crystalline structure after thermal anneal at 400 degrees C. The 400 degrees C-annealed nanoflake thin film has a band gap energy in the red-light range (similar to 2.06 eV), and exhibits a very sensitive photoresponse upon the UV (365 nm) illumination. The high photoresponse sensitivity of the 400 degrees C-annealed nanoflake thin film is ascribed to a lower density of recombination centers and traps due to an excellent crystallinity and a high carrier extraction efficiency due to a low electrical resistivity. A slight decrease in the photocurrent density during the initial stage of the UV illumination is attributed to adsorption of O-2(-) anions on the 400 degrees C-annealed nanoflakes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3476567]en_US
dc.language.isoen_USen_US
dc.titleGrowth and photoresponse study of PdO nanoflakes reactive-sputter deposited on SiO2en_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3476567en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume108en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282478900006en_US
dc.citation.woscount13en_US
Appears in Collections:Articles