標題: Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitions
作者: Lin, DS
Wu, PH
物理研究所
Institute of Physics
關鍵字: scanning tunneling microscopy;silicon;surface thermodynamics
公開日期: 1-Feb-1998
摘要: We report on the discovery of Si(100)-(2 x 1)-->(2 x n)-->c(4 x 4) structural phase transitions. Annealing the Si(100)-(2 x 1) surface between 590 and 700 degrees C for some hours causes dimer vacancies to increase and nucleate into chains, ultimately forming the (2 x n) structure. After further annealing. c(4 x 4) areas appear grow. and finally cover the entire surface. Experimental results raise the possibility not only that c(4 x 4) is a stable low-temperature structure of Si(100), but that (2 x 1) is a high-temperature phase stabilized at room temperature owing to its kinetic limitations. (C) 1998 Elsevier Science B.V.
URI: http://dx.doi.org/10.1016/S0039-6028(97)00868-6
http://hdl.handle.net/11536/150015
ISSN: 0039-6028
DOI: 10.1016/S0039-6028(97)00868-6
期刊: SURFACE SCIENCE
Volume: 397
Appears in Collections:Articles