標題: Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering
作者: Hsueh, Kuang-Po
Tun, Chun-Ju
Chiu, Hsien-Chin
Huang, Yu-Ping
Chi, Gou-Chung
光電工程學系
Department of Photonics
公開日期: 1-Jul-2010
摘要: This study investigates the effects of thermal annealing on the MgxZn1-xO films. MgxZn1-xO films were deposited by a radio-frequency magnetron sputtering system using a 6 in. ZnO/MgO (80/20wt%) target. The Hall results, x-ray diffraction (XRD), transmittance, and x-ray photoelectron spectroscopy (XPS) were measured. The XRD results indicate that the appearance of only (111) peaks in the as-grown MgxZn1-xO film is a sign of the cubic single phase, whereas the appearance of ZnO (002) peaks in MgxZn1-xO films annealed at 700 and 800 C confirms the formation of a wurtzite single-phase crystal. The existence of a weak (002) -wurtzite peak besides the (111)-cubic peak indicates the coexistence of two phases. The absorption spectra of MgxZn1-xO annealed at 700 and 800 C show two stages at wavelengths of 357 and 261 nm. The XPS spectra of MgxZn1-xO films were also demonstrated. The results of this study show that the ZnO films were separated from MgxZn1-xO films after higher thermal annealing. c 2010 American Vacuum Society. [DOI: 10.1116/1.3442476]
URI: http://dx.doi.org/10.1116/1.3442476
http://hdl.handle.net/11536/150001
ISSN: 1071-1023
DOI: 10.1116/1.3442476
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 28
Issue: 4
起始頁: 720
結束頁: 723
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