標題: High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
作者: Lin, Meng-Han
Wu, Ming-Chi
Huang, Chun-Yang
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 28-Jul-2010
摘要: The fabrication of SrZrO3 (SZO) memory devices with oxygen-rich (OR) and oxygen-deficient (OD) double layers, their resistive switching (RS) characteristics and mechanisms are investigated in this study. Due to the difference in oxygen content between the OR and OD layers formed by an oxygen flow control (OFC) process during SZO deposition, the RS region is effectively reduced and localized within the OR layer, which leads to a low operation voltage and stable RS behaviours. Furthermore, the OFC SZO device exhibits high-speed switching (10 ns) over 400 times and long retention (>10(6) s), showing promising potential for next-generation nonvolatile memory applications.
URI: http://dx.doi.org/10.1088/0022-3727/43/29/295404
http://hdl.handle.net/11536/149984
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/29/295404
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 43
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