|標題:||Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing|
|作者:||Lee, Y. J.|
Lee, C. H.
Tung, L. T.
Chiang, T. H.
Lai, T. Y.
Department of Photonics
Institute of EO Enginerring
|摘要:||Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.|
|期刊:||JOURNAL OF PHYSICS D-APPLIED PHYSICS|
|Appears in Collections:||Articles|