標題: Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing
作者: Lee, Y. J.
Lee, C. H.
Tung, L. T.
Chiang, T. H.
Lai, T. Y.
Kwo, J.
Hsu, C-H
Hong, M.
Department of Photonics
Institute of EO Enginerring
公開日期: 7-Apr-2010
摘要: Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology.
URI: http://dx.doi.org/10.1088/0022-3727/43/13/135101
ISSN: 0022-3727
DOI: 10.1088/0022-3727/43/13/135101
Volume: 43
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