標題: Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays
作者: Hong, Chi-Chang
Ahn, Hyeyoung
Wu, Chen-Ying
Gwo, Shangjr
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 28-Sep-2009
摘要: We report intense green photoluminescence (PL) from vertically aligned indium gallium nitride (InxGa1-xN) nanorod arrays. The formation of InxGa1-xN/GaN-heterostructure nanorods increases the localization depth of the radially confined carriers (> 100 meV). Temperature dependent PL peak energy of InGaN nanorods shows the characteristic S-shaped behavior, indicating the prominent carrier trapping in band-tail states associated with the nonuniformity of In content. Time-resolved PL (TRPL) response decays biexponentially and the dominant slow decay component of TRPL for InxGa1-xN nanorods is due to the transfer of excitons to the localized states before the radiative decay. (C) 2009 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.17.017227
http://hdl.handle.net/11536/149833
ISSN: 1094-4087
DOI: 10.1364/OE.17.017227
期刊: OPTICS EXPRESS
Volume: 17
Issue: 20
起始頁: 17227
結束頁: 17233
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