標題: Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate
作者: Chiu, Ching-Hsueh
Lin, Da-Wei
Li, Zhen-Yu
Ling, Shih-Chun
Kuo, Hao-Chung
Lu, Tien-Chang
Wang, Shing-Chung
Liao, Wei-Tasi
Tanikawa, Tomoyuki
Honda, Yoshio
Yamaguchi, Masahito
Sawaki, Nobuhiko
光電工程學系
Department of Photonics
關鍵字: LEDs;MOCVD;Si;semi-polar;efficiency droop
公開日期: 2011
摘要: We present a study of semi-polar (1 (1) over bar 01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.
URI: http://hdl.handle.net/11536/14983
http://dx.doi.org/10.1117/12.876656
ISBN: 978-0-81948-476-5
ISSN: 0277-786X
DOI: 10.1117/12.876656
期刊: GALLIUM NITRIDE MATERIALS AND DEVICES VI
Volume: 7939
Appears in Collections:Conferences Paper


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