標題: Photovoltaic effects in BiFeO3
作者: Yang, S. Y.
Martin, L. W.
Byrnes, S. J.
Conry, T. E.
Basu, S. R.
Paran, D.
Reichertz, L.
Ihlefeld, J.
Adamo, C.
Melville, A.
Chu, Y. -H.
Yang, C. -H.
Musfeldt, J. L.
Schlom, D. G.
Ager, J. W., III
Ramesh, R.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: bismuth compounds;ferroelectric thin films;indium;photovoltaic effects;polarisation;tin compounds
公開日期: 10-Aug-2009
摘要: We report a photovoltaic effect in ferroelectric BiFeO3 thin films. The all-oxide heterostructures with SrRuO3 bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages similar to 0.8-0.9 V and external quantum efficiencies up to similar to 10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO3/tin doped indium oxide interface.
URI: http://dx.doi.org/10.1063/1.3204695
http://hdl.handle.net/11536/149818
ISSN: 0003-6951
DOI: 10.1063/1.3204695
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Appears in Collections:Articles