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dc.contributor.authorLin, YHen_US
dc.contributor.authorLee, CLen_US
dc.contributor.authorLei, TFen_US
dc.date.accessioned2019-04-02T05:59:15Z-
dc.date.available2019-04-02T05:59:15Z-
dc.date.issued1998-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://hdl.handle.net/11536/149727-
dc.description.abstractIn this work, the evidence of the stress-induced leakage current related with the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. And the trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents.en_US
dc.language.isoen_USen_US
dc.titleCorrelation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxideen_US
dc.typeArticleen_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume45en_US
dc.citation.spage567en_US
dc.citation.epage570en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000071692800032en_US
dc.citation.woscount10en_US
Appears in Collections:Articles