標題: Correlation of stress-induced leakage current with generated positive trapped charges for ultrathin gate oxide
作者: Lin, YH
Lee, CL
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-1998
摘要: In this work, the evidence of the stress-induced leakage current related with the stress-generated positive trapped charges is presented and investigated. It is shown that the centroid of the positive trapped charges, which depends on the polarity of the stress current, affects the magnitude of the leakage current. And the trapping density of positive charges, which is determined by the final stress applied on the oxide, determines the final level of the leakage currents.
URI: http://hdl.handle.net/11536/149727
ISSN: 0018-9383
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 45
起始頁: 567
結束頁: 570
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