Title: Domain Matching Epitaxial Growth of High-Quality ZnO Film Using a Y2O3 Buffer Layer on Si (111)
Authors: Liu, W. -R.
Li, Y. -H.
Hsieh, W. F.
Hsu, C. -H.
Lee, W. C.
Lee, Y. J.
Hong, M.
Kwo, J.
Department of Photonics
Institute of EO Enginerring
Issue Date: 1-Jan-2009
Abstract: High-quality ZnO epitaxial films have been grown by pulsed-laser deposition on Si (111) substrates using a nanothick high-k oxide Y2O3 buffer layer. Determined by X-ray diffraction and transmission electron microscopy, the epitaxial relationship between ZnO and Y2O3 follows (0001)< 2 (1) over bar(1) over bar0 >(ZnO)parallel to(111)< 10 (1) over bar > Y2O3. ZnO lattice aligns with the hexagonal O sublattice in Y2O3 and the interfacial structure can be well described by domain matching epitaxy with 7 or 8 ZnO {11 (2) over bar0} planes matching 6 or 7 {4 (4) over bar0} planes Of Y2O3 and lead to a significant reduction of residual strain. Superior optical properties were obtained even for ZnO films as thin as 0.21 mu m from photoluminescence results.
URI: http://dx.doi.org/10.1021/cg8003849
ISSN: 1528-7483
DOI: 10.1021/cg8003849
Volume: 9
Begin Page: 239
End Page: 242
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