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dc.contributor.authorWang, DPen_US
dc.contributor.authorHuang, KMen_US
dc.contributor.authorShen, TLen_US
dc.contributor.authorHuang, KFen_US
dc.contributor.authorHuang, TCen_US
dc.date.accessioned2019-04-02T05:59:11Z-
dc.date.available2019-04-02T05:59:11Z-
dc.date.issued1997-09-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.366148en_US
dc.identifier.urihttp://hdl.handle.net/11536/149654-
dc.description.abstractThe electroreflectance spectra of surface-intrinsic-n(+)-type-doped GaAs were measured at various bias voltages (V-bias). Results revealed many Franz-Keldysh oscillations (FKOs) above the band-gap energy, which have been attributed to a uniform electric field (F) in the undoped layer below the surface. However, there has been no other evidence for the uniformity of F in the undoped layer. Since it is known that F can be deduced from the periods of the FKOs, the relations between F and V-bias can, thereby, be obtained. The nearly linear relation, thus found, confirms the existence of a nearly uniform field in the undoped layer. From the plot of F against V-bias,the Values of the thickness of the undoped layer and the barrier height can also be evaluated. (C) 1997 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectroreflectance of surface-intrinsic- n(+)-type doped GaAsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.366148en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume82en_US
dc.citation.spage3089en_US
dc.citation.epage3091en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1997XX99600056en_US
dc.citation.woscount5en_US
Appears in Collections:Articles