標題: Electroreflectance of surface-intrinsic- n(+)-type doped GaAs
作者: Wang, DP
Huang, KM
Shen, TL
Huang, KF
Huang, TC
電子物理學系
Department of Electrophysics
公開日期: 15-Sep-1997
摘要: The electroreflectance spectra of surface-intrinsic-n(+)-type-doped GaAs were measured at various bias voltages (V-bias). Results revealed many Franz-Keldysh oscillations (FKOs) above the band-gap energy, which have been attributed to a uniform electric field (F) in the undoped layer below the surface. However, there has been no other evidence for the uniformity of F in the undoped layer. Since it is known that F can be deduced from the periods of the FKOs, the relations between F and V-bias can, thereby, be obtained. The nearly linear relation, thus found, confirms the existence of a nearly uniform field in the undoped layer. From the plot of F against V-bias,the Values of the thickness of the undoped layer and the barrier height can also be evaluated. (C) 1997 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.366148
http://hdl.handle.net/11536/149654
ISSN: 0021-8979
DOI: 10.1063/1.366148
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 82
起始頁: 3089
結束頁: 3091
Appears in Collections:Articles