標題: Characteristics of Current-Injected GaN-Based Vertical-Cavity Surface-Emitting Lasers
作者: Lu, Tien-Chang
Wu, Tzeng-Tsong
Chen, Shih-Wei
Tu, Po-Min
Li, Zhen-Yu
Chen, Chien-Kang
Chen, Cheng-Hung
Kuo, Hao-Chung
Wang, Shing-Chung
Zan, Hsiao-Wen
Chang, Chun-Yen
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: Distributed Bragg reflectors (DBRs);GaN;vertical-cavity surface-emitting laser (VCSEL)
公開日期: 1-十一月-2011
摘要: This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair Ta(2)O(5)/SiO(2) top DBR, a 7 lambda-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed under continuous-wave operation at room temperature. The laser characteristics, such as temperature-dependent laser threshold current, emission wavelength, and spontaneous emission coupling factors, have been measured and discussed.
URI: http://dx.doi.org/10.1109/JSTQE.2011.2116771
http://hdl.handle.net/11536/14938
ISSN: 1077-260X
DOI: 10.1109/JSTQE.2011.2116771
期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume: 17
Issue: 6
起始頁: 1594
結束頁: 1602
顯示於類別:期刊論文