標題: Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching
作者: Kang, TK
Ueng, SY
Dai, BT
Chen, LP
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MOS capacitors;ECR system;E(bd) degradation;antenna charging effect
公開日期: 1-二月-1996
摘要: The nonuniformity of the induced leakage current in metal oxide semiconductor (MOS) capacitors has been investigated in an electron cyclotron resonance (ECR) system. For plasma-etched MOS capacitors with 5-nm-thick oxides, it is found that the leakage currents induced by plasma etching increase with increasing overetching time. However, additional E(bd) (breakdown held) degradation is not obvious as overetching percentage increases from 10% to 50%. A mechanism based on the antenna charging effect has been proposed to explain the E(bd) electrical characteristics. In accordance with the mechanism, the E(bd) degradation has been significantly reduced by first etching off a narrow peripheral edge around the gate pattern.
URI: http://dx.doi.org/10.1143/JJAP.35.578
http://hdl.handle.net/11536/1492
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.578
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 35
Issue: 2A
起始頁: 578
結束頁: 583
顯示於類別:期刊論文


文件中的檔案:

  1. A1996UE24500013.pdf