標題: Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs
作者: Chen, William Po-Nien
Kuo, Jack Jyun-Yan
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Cryogenic temperature;MOSFET;phonon-scattering-limited mobility;strain silicon;uniaxial
公開日期: 1-十二月-2011
摘要: This paper investigates the temperature dependence of phonon-scattering-limited mobility mu(PH) for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility mu SR and mu(PH) are successfully decoupled. This paper indicates that the temperature sensitivity of mu(PH) is proportional to T(-1.75) for a neutral stressor and becomes higher when compressive strain is applied. It is explained by the higher optical phonon energy induced by uniaxially compressive strain. Our new findings may also explain the previously reported higher temperature sensitivity of drain current present in uniaxial strained pMOSFETs.
URI: http://dx.doi.org/10.1109/TED.2011.2167153
http://hdl.handle.net/11536/14906
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2167153
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 12
起始頁: 4427
結束頁: 4429
顯示於類別:期刊論文


文件中的檔案:

  1. 000297337000040.pdf