標題: Surface Treatments on the Characteristics of Metal-Oxide Semiconductor Capacitors
作者: Horng, Ray-Hua
Tseng, Ming-Chun
Wuu, Dong-Sing
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: chemical treatment;capacitor;interface state trap density
公開日期: 1-Jan-2019
摘要: The properties of metal-oxide semiconductor (MOS) capacitors with different chemical treatments have been examined in this study. A MOS capacitor consists of an Al2O3/n-GaN/AlN buffer/Si substrate. Four chemical treatments, containing organic solvents, oxygen plasma and BCl3 plasma, dilute acidic and alkali solvents, and hydrofluoric acid, were used to reduce the metal ions, native oxides, and organic contaminants. The n-GaN surface was treated with these chemical treatments before Al2O3 was grown on the treated n-GaN surface to reduce the interface state trap density (D-it). The value of D-it was calculated using the capacitance-voltage curve at 1 MHz. The D-it of a u-GaN surface was modified using various solutions, which further influenced the contact properties of GaN.
URI: http://dx.doi.org/10.3390/cryst9010001
http://hdl.handle.net/11536/148867
ISSN: 2073-4352
DOI: 10.3390/cryst9010001
期刊: CRYSTALS
Volume: 9
Appears in Collections:Articles


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