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dc.contributor.authorChen, WKen_US
dc.contributor.authorPan, YCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorOu, Jen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorLee, MCen_US
dc.date.accessioned2019-04-02T05:59:23Z-
dc.date.available2019-04-02T05:59:23Z-
dc.date.issued1997-12-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.L1625en_US
dc.identifier.urihttp://hdl.handle.net/11536/148757-
dc.description.abstractWe report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.en_US
dc.language.isoen_USen_US
dc.subjectInNen_US
dc.subjectMOVPEen_US
dc.titleGrowth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.36.L1625en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume36en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000071341800001en_US
dc.citation.woscount25en_US
Appears in Collections:Articles