標題: A new quantitative model for weak inversion charge injection in MOSFET analog switches
作者: Gu, YB
Chen, MJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-二月-1996
摘要: This paper proposes a new model concerning the channel charges in weak inversion injected from a turn-off MOSFET into a holding capacitor, This portion of charge injection has recently been newly observed, showing a significant contribution to the switch-induced error voltage on the switched capacitor, Our model is derived at the critical point where the device is operated in the transition region between strong inversion and weak inversion, This point has been expressed explicitly as a function of the DC input voltage, the threshold voltage, and the fall time of the gate voltage, The ability of the model in accurately determining quantitatively the impact of the weak inversion charge injection on the error voltage has been extensively judged experimentally and by two-dimensional mixed-mode simulation for a wide variety of design parameters such as the channel width and length, the holding capacitance, the fail time of the gate voltage, and the DC input voltage. The assumptions utilized in the model development have also been validated.
URI: http://dx.doi.org/10.1109/16.481731
http://hdl.handle.net/11536/1485
ISSN: 0018-9383
DOI: 10.1109/16.481731
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 43
Issue: 2
起始頁: 295
結束頁: 302
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TU66500015.pdf