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dc.contributor.authorLi, Mengjiaoen_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorChang, Jen-Kueien_US
dc.contributor.authorYang, Feng-Shouen_US
dc.contributor.authorZhong, Chaorongen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorHo, Ching-Hwaen_US
dc.contributor.authorLiu, Heng-Juien_US
dc.contributor.authorHuang, Rongen_US
dc.contributor.authorLi, Wenwuen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.contributor.authorChu, Junhaoen_US
dc.description.abstractTunability and stability in the electrical properties of 2D semiconductors pave the way for their practical applications in logic devices. A robust layered indium selenide (InSe) field-effect transistor (FET) with superior controlled stability is demonstrated by depositing an indium (In) doping layer. The optimized InSe FETs deliver an unprecedented high electron mobility up to 3700 cm(2) V-1 s(-1) at room temperature, which can be retained with 60% after 1 month. Further insight into the evolution of the position of the Fermi level and the microscopic device structure with different In thicknesses demonstrates an enhanced electron-doping behavior at the In/InSe interface. Furthermore, the contact resistance is also improved through the In insertion between InSe and Au electrodes, which coincides with the analysis of the low-frequency noise. The carrier fluctuation is attributed to the dominance of the phonon scattering events, which agrees with the observation of the temperature-dependent mobility. Finally, the flexible functionalities of the logic-circuit applications, for instance, inverter and not-and (NAND)/not-or (NOR) gates, are determined with these surface-doping InSe FETs, which establish a paradigm for 2D-based materials to overcome the bottleneck in the development of electronic devices.en_US
dc.subject2D electronicsen_US
dc.subjectInSe transistorsen_US
dc.subjectlogic circuitsen_US
dc.subjectlow-frequency noiseen_US
dc.subjectsurface charge transfer dopingen_US
dc.titleHigh Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Dopingen_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
Appears in Collections:Articles