標題: First Experimental Demonstration and Mechanism of Abnormal Palladium Diffusion Induced by Excess Interstitial Ge
作者: Chou, Chen-Han
Shih, An-Shih
Yu, Shao-Cheng
Lin, Yu-Hsi
Tsai, Yi-He
Lin, Chiung-Yuan
Yeh, Wen-Kuan
Chien, Chao-Hsin
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: First-principles calculations;fermi-level pinning effect;germanium;palladium germanide;Schottky junction;technology computer-aided design;trap-assisted tunneling
公開日期: 1-Nov-2018
摘要: This letter represents the first direct experimental demonstrations and mechanism proposal regarding abnormal palladium diffusion into germanium (Ge). Our experiments indicated that excess Ge atoms among palladium germanide alloy formation indirectly induce the abnormal out-diffusion of mass palladium atoms into Ge. Consequently, palladium germanide alloy on both n-type and p-type Ge form ohmic-like Schottky junctions. To identify this phenomenon, first-principle calculations and technology computer-aided design simulation were used to evaluate the electrical influence of palladium atoms in Ge. We discovered that the activated palladium atoms in Ge induce large midgap bulk-trap states, which contribute to a severe increment of trap-assisted tunneling current at the palladium germanide/Ge junction.
URI: http://dx.doi.org/10.1109/LED.2018.2871714
http://hdl.handle.net/11536/148372
ISSN: 0741-3106
DOI: 10.1109/LED.2018.2871714
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 39
起始頁: 1632
結束頁: 1635
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