標題: Numerical analysis of frequency dispersion of transconductance in GaAs MESFET's
作者: Lo, SH
Lee, CP
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-二月-1996
摘要: A fully two-dimensional numerical model for the transconductance dispersion in GaAs MESFET's is presented, According to simulated results, the dominating surface traps belong to the hole trap type in order to obtain consistent results with reported measurements, The AC frequency-dependent modulation of negative surface charge can explain this anomalous phenomenon. The holes injecting from and emitting out of the gate metal electrode interact with the surface hole traps, and result in the change of the gate-to-source and the gate-to-drain resistances, which in turn cause the change in transconductance. The gate voltage and the gate length effects on the dispersion are also considered, Good agreement with reported results is obtained.
URI: http://dx.doi.org/10.1109/16.481720
http://hdl.handle.net/11536/1483
ISSN: 0018-9383
DOI: 10.1109/16.481720
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 43
Issue: 2
起始頁: 213
結束頁: 219
顯示於類別:期刊論文


文件中的檔案:

  1. A1996TU66500004.pdf