標題: Thermal Stability and Performance of NbSiTaTiZr High-Entropy Alloy Barrier for Copper Metallization
作者: Tsai, Ming-Hung
Wang, Chun-Wen
Tsai, Che-Wei
Shen, Wan-Jui
Yeh, Jien-Wei
Gan, Jon-Yiew
Wu, Wen-Wei
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2011
摘要: Development of better diffusion barriers for Cu metallization is one of the key issues for the microelectronics industry. Although metallic diffusion barriers offer many advantages, their application is hindered due to their inferior thermal stability relative to ceramic barriers. Here we report on a metallic diffusion barrier, NbSiTaTiZr, which shows thermal stability comparable to ceramic barriers. The outstanding performance of NbSiTaTiZr is due to its better structural and chemical stability at high temperatures. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.056111jes] All rights reserved.
URI: http://hdl.handle.net/11536/14828
http://dx.doi.org/10.1149/2.056111jes
ISSN: 0013-4651
DOI: 10.1149/2.056111jes
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 158
Issue: 11
起始頁: H1161
結束頁: H1165
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