|標題:||Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide|
Sze, Simon M.
Yeh (Huang), Fon-Shan
Department of Electronics Engineering and Institute of Electronics
|摘要:||This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.|
|期刊:||ELECTROCHEMICAL AND SOLID STATE LETTERS|