標題: Spin-dependent electronic tunneling at zero magnetic field
作者: Voskoboynikov, A
Liu, SS
Lee, CP
交大名義發表
National Chiao Tung University
公開日期: 15-Dec-1998
摘要: The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
URI: http://dx.doi.org/10.1103/PhysRevB.58.15397
http://hdl.handle.net/11536/148013
ISSN: 2469-9950
DOI: 10.1103/PhysRevB.58.15397
期刊: PHYSICAL REVIEW B
Volume: 58
Issue: 23
起始頁: 15397
結束頁: 15400
Appears in Collections:Articles


Files in This Item:

  1. a9cdb3e6215aaa3c22e29532d1863061.pdf