標題: Structural and optoelectronic properties of Al-doped zinc oxide films deposited on flexible substrates by radio frequency magnetron sputtering
作者: Tseng, C. H.
Huang, C. H.
Chang, H. C.
Chen, D. Y.
Chou, C. P.
Hsu, C. Y.
機械工程學系
Department of Mechanical Engineering
關鍵字: Zinc oxide;Transparent conducting film;Buffer layer;Carrier concentration
公開日期: 1-九月-2011
摘要: Al-doped zinc oxide (AZO) thin films were deposited onto flexible polyethylene terephthalate substrates, using the radio frequency (RF) magnetron sputtering process, with an AZO ceramic target (The Al(2)O(3) content was about 2 wt.%). The effects of the argon sputtering pressure (in the range from 0.66 to 2.0 Pa), thickness of the Al buffer layer (thickness of 2, 5, and 10 nm) and annealing in a vacuum (6.6 x 10(-4) Pa), for 30 min at 120 degrees C, on the morphology and optoelectronic performances of AZO films were investigated. The resistivity was 9.22 x 10(-3) Omega cm, carrier concentration was 4.64 x 10(21) cm(-3), Hall mobility was 2.68 cm(2)/V s and visible range transmittance was about 80%, at an argon sputtering pressure of 2.0 Pa and an RF power of 100 W. Using an Al buffer decreases the resistivity and optical transmittance of the AZO films. The crystalline and microstructure characteristics of the AZO films are improved by annealing. (C) 2011 Elsevier BM. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2011.05.017
http://hdl.handle.net/11536/14800
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2011.05.017
期刊: THIN SOLID FILMS
Volume: 519
Issue: 22
起始頁: 7959
結束頁: 7965
顯示於類別:期刊論文


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