標題: Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
作者: Singh, Pragya
Simanjuntak, Firman Mangasa
Kumar, Amit
Tseng, Tseung-Yuen
電子工程學系及電子研究所
電機工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Electrical and Computer Engineering
關鍵字: Resistive switching;Nanorods;Gallium;Zinc oxide;Conductive-bridge random-access memory;Chemical solution deposition
公開日期: 30-Aug-2018
摘要: The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 10(4) s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.
URI: http://dx.doi.org/10.1016/j.tsf.2018.03.027
http://hdl.handle.net/11536/147983
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2018.03.027
期刊: THIN SOLID FILMS
Volume: 660
起始頁: 828
結束頁: 833
Appears in Collections:Articles