標題: Light emission from the porous boron delta-doped Si superlattice
作者: Chang, TC
Yeh, WK
Hsu, MY
Chang, CY
Lee, CP
Jung, TG
Tsai, WC
Huang, GW
Mei, YJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Feb-1996
摘要: We report the first study on the porous boron delta-doped Si superlattice. Visible photoluminescence (PL) was observed with multiple peaks from the porous boron delta-doped Si superlattice at room temperature. In the electroluminescence (EL) experiment, a bright yellow light emission was observed from the porous boron delta-doped Si superlattices. However, a weak red light emission was also observed from the conventional porous Si which is anodized at the same etching condition. As a result, the structure of the porous boron delta-doped Si superlattice has the ability of controlling the quantum size in porous Si and enhancing the light intensity from porous Si.
URI: http://dx.doi.org/10.1016/0169-4332(95)00297-9
http://hdl.handle.net/11536/1478
ISSN: 0169-4332
DOI: 10.1016/0169-4332(95)00297-9
期刊: APPLIED SURFACE SCIENCE
Volume: 92
Issue: 
起始頁: 571
結束頁: 574
Appears in Collections:Conferences Paper


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